Intusoft IGBT Models
Date: 2/95
Copyright © Intusoft 1995
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SPICE Simulation Models
These SPICE simulation models may be used and distributed freely,
provided they are not altered in any way, resold, or included in
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These models are part of the ICAP/4Windows Deluxe package which currently
includes over 10,000 models and hundreds of different part types. With
regard to the number of part types, it is the largest library available
from ANY SPICE vendor!!
SpiceMod Modeling Software
SpiceMod is a CAE program that is used to create SPICE models from
data sheet values. SPICEMOD is particularly useful in the circuit
design phase because it allows the designer to create SPICE models
based on electrical specifications before an actual device is selected.
SpiceMod may be used to create models for diodes, Zener diodes, BJTs,
power BJTs, Darlington BJTs, JFETs, MOSFETs, power MOSFETs, IGBTs,
SCRs, and TRIACS.
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Macromodels, simulation models, or other models provided by
Intusoft, directly or indirectly, are not warranted by
Intusoft as fully representing all of the specifications and
operating characteristics of the semiconductor product to
which the model relates. Moreover, these models are
furnished on an "as is" basis without support or warranty of
any kind, either expressed or implied, regarding the use
thereof and Intusoft specifically disclaims all implied
warranties of merchantability and fitness of the models for
any purpose. Intusoft does not assume any liability arising
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infringement of patents and copyrights nor does Intusoft
convey any license under its patents and copyrights or the
rights of others. Intusoft reserves the right to make
changes without notice to any model.
Although the use of macromodels can be a useful tool in evaluating
device performance in various applications, they cannot
model exact device performance under all conditions, nor are
they intended to replace breadboarding for final
verification.
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Omnirel IGBT Models made with the SpiceMod Modeling Program
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*SRC=OM6502ST;OM6502ST;IGBTs;No Diode;500V 10A
*SYM=IGBT
.SUBCKT OM6502ST 71 72 74
* TERMINALS: C G E
* 500 Volt 10 Amp 375NS N-Channel IGBT 11-27-1995
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 .206
RE 83 73 20.6M
RG 72 82 15
CGE 82 83 870P
CGC 82 71 1P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 13.4N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 20 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=21.8F NF=1.2 BF=5.1 CJE=14.1N TF=375N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=349K THETA=80M ETA=2.4M VTO=3 KP=.149)
.MODEL DR D (IS=2.18F CJO=959P VJ=1 M=.82)
.MODEL DO D (IS=2.18F BV=500 CJO=674P VJ=1 M=.7)
.MODEL DE D (IS=2.18F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=OM6507SA;OM6507SA;IGBTs;No Diode;1000V 8A
*SYM=IGBT
.SUBCKT OM6507SA 71 72 74
* TERMINALS: C G E
* 1000 Volt 8 Amp 55NS N-Channel IGBT 11-27-1995
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 .303
RE 83 73 30.3M
RG 72 82 18.7
CGE 82 83 1.45N
CGC 82 71 1P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 9.92N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 25 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=2.49F NF=1.2 BF=5.1 CJE=10.9N TF=55N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=603K THETA=80M ETA=1.2M VTO=3 KP=.247)
.MODEL DR D (IS=.249F CJO=709P VJ=1 M=.82)
.MODEL DO D (IS=.249F BV=1K CJO=978P VJ=1 M=.7)
.MODEL DE D (IS=.249F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SRC=OM6526SA;OM6526SA;IGBTs;No Diode;1000V 15A
*SYM=IGBT
.SUBCKT OM6526SA 71 72 74
* TERMINALS: C G E
* 1000 Volt 15 Amp 75NS N-Channel IGBT 11-27-1995
Q1 83 81 85 QOUT
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 59.5M
RE 83 73 5.95M
RG 72 82 10
CGE 82 83 1.25N
CGC 82 71 1P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 9.92N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 25 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=32.8F NF=1.2 BF=5.1 CJE=10.4N TF=75N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=603K THETA=43.6M ETA=1.2M VTO=5.5 KP=.165)
.MODEL DR D (IS=3.28F CJO=709P VJ=1 M=.82)
.MODEL DO D (IS=3.28F BV=1K CJO=489P VJ=1 M=.7)
.MODEL DE D (IS=3.28F BV=14.3 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
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Toshiba IGBT Models made with the SpiceMod Modeling Program
**********
*SYM=IGBT
*SRC=GT8J102;GT8J102;IGBTs;No Diode;TOSHIBA 600V 8A 37.5NS
.SUBCKT GT8J102 71 72 74
* TERMINALS: C G E
Q1 83 81 85 QOUT OFF
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 0.184
RE 83 73 18.4M
RG 72 82 18.8
CGE 82 83 620P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 2.25N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=17.5F NF=1.2 BF=5.1 CJE=2.91N TF=37.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.2M ETA=2.01M VTO=5.2 KP=0.424)
.MODEL DR D (IS=1.75F CJO=160P VJ=1 M=0.82)
.MODEL DO D (IS=1.75F BV=599 CJO=668P VJ=1 M=0.7)
.MODEL DE D (IS=1.75F BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
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*SYM=IGBT
*SRC=GT8Q101;GT8Q101;IGBTs;No Diode;TOSHIBA 1.2E+03V 8A 62.5NS
.SUBCKT GT8Q101 71 72 74
* TERMINALS: C G E
Q1 83 81 85 QOUT OFF
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 0.106
RE 83 73 10.6M
RG 72 82 42.9
CGE 82 83 620P
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 2.25N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=75.5F NF=1.2 BF=5.1 CJE=2.91N TF=62.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=705K THETA=46.2M ETA=1M VTO=5.2 KP=0.391)
.MODEL DR D (IS=7.55F CJO=160P VJ=1 M=0.82)
.MODEL DO D (IS=7.55F BV=1.2K CJO=668P VJ=1 M=0.7)
.MODEL DE D (IS=7.55F BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
**********
*SYM=IGBT
*SRC=GT15J101;GT15J101;IGBTs;No Diode;TOSHIBA 600V 15A 62.5NS
.SUBCKT GT15J101 71 72 74
* TERMINALS: C G E
Q1 83 81 85 QOUT OFF
M1 81 82 83 83 MFIN L=1U W=1U
DSD 83 81 DO
DBE 85 81 DE
RC 85 71 56.5M
RE 83 73 5.65M
RG 72 82 10
CGE 82 83 1.12N
EGD 91 0 82 81 1
VFB 93 0 0
FFB 82 81 VFB 1
CGD 92 93 6.08N
R1 92 0 1
D1 91 92 DLIM
DHV 94 93 DR
R2 91 94 1
D2 94 0 DLIM
LE 73 74 7.5N
DLV 94 95 DR 13
RLV 95 0 1
ESD 96 93 POLY(1) 83 81 19 1
MLV 95 96 93 93 SW
.MODEL SW NMOS (LEVEL=3 VTO=0 KP=5)
.MODEL QOUT PNP (IS=142F NF=1.2 BF=5.1 CJE=7.18N TF=62.5N XTB=1.3)
.MODEL MFIN NMOS (LEVEL=3 VMAX=400K THETA=46.2M ETA=2.01M VTO=5.2 KP=0.796)
.MODEL DR D (IS=14.2F CJO=434P VJ=1 M=0.82)
.MODEL DO D (IS=14.2F BV=599 CJO=1.1N VJ=1 M=0.7)
.MODEL DE D (IS=14.2F BV=15 N=2)
.MODEL DLIM D (IS=100N)
.ENDS
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